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IRF2804S

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件:277.38 Kbytes 页数:12 Pages

IRF

IRF2804S

Advanced Process Technology

文件:285.49 Kbytes 页数:13 Pages

IRF

IRF2804S-7P

AUTOMOTIVE MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

文件:263.09 Kbytes 页数:10 Pages

IRF

IRF2804S-7PPBF

HEXFET짰 Power MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

文件:668.37 Kbytes 页数:11 Pages

IRF

IRF2804SPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:771.44 Kbytes 页数:12 Pages

IRF

IRF2804S-7P

Advanced Process Technology

文件:298.26 Kbytes 页数:11 Pages

IRF

IRF2804S-7PPBF

Advanced Process Technology

文件:286.19 Kbytes 页数:10 Pages

IRF

IRF2804S-7PPBF_15

Advanced Process Technology

文件:286.19 Kbytes 页数:10 Pages

IRF

IRF2804SRPBF

Advanced Process Technology

文件:285.49 Kbytes 页数:13 Pages

IRF

IRF2804STRR7PP

Advanced Process Technology

文件:298.26 Kbytes 页数:11 Pages

IRF

技术参数

  • OPN:

    IRF2804STRLPBF

  • Qualification:

    Non-Automotive

  • Package name:

    D2PAK

  • VDS max:

    40 V

  • RDS (on) @10V max:

    2.3 mΩ

  • ID @25°C max:

    270 A

  • QG typ @10V:

    160 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
TO263
3200
原装长期供货!
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
IR
25+
TO-263
18000
原厂直接发货进口原装
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
IR
23+
TO-263
5000
原装正品,假一罚十
询价
25+
TO-263
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
25+23+
TO263
17818
绝对原装正品全新进口深圳现货
询价
IR
18+
TO-263
41200
原装正品,现货特价
询价
更多IRF2804S供应商 更新时间2025-12-1 17:43:00