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IRF2804SPBF中文资料IRF数据手册PDF规格书
IRF2804SPBF规格书详情
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF2804SPBF
- 功能描述：
MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
Infineon(英飞凌) |
24+ |
D2PAK |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
IR |
24+ |
TO-263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
13+ |
TO-263 |
1100 |
询价 | |||
IR |
1239 |
1 |
公司优势库存 热卖中! |
询价 | |||
IR |
2405+ |
TO-263 |
4475 |
只做原装正品渠道订货 |
询价 | ||
Infineon |
23+ |
集成电路(IC) |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
IR |
23+ |
TO-263 |
2050 |
原装正品代理渠道价格优势 |
询价 | ||
IR |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 |
