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IRF2804S-7PPBF中文资料PDF规格书
IRF2804S-7PPBF规格书详情
VDSS = 40V
RDS(on) = 1.6mΩ
ID = 160A
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
产品属性
- 型号：
IRF2804S-7PPBF
- 功能描述：
MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | |||
IR |
16+ |
TO-263-7 |
1200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
D2PAK-7P |
50000 |
大批量供应优势库存热卖 |
询价 | ||
VISHAY |
2018+ |
TO-263 |
12000 |
VISHAY专营进口原装现货假一赔十 |
询价 | ||
IR |
23+ |
TO-263-7 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
2023+ |
TO-263-7 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
INFINEON TECHNOLOGIES |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
21+ |
TO-263-7 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
23+ |
NA |
156 |
专做原装正品,假一罚百! |
询价 | ||
IR |
19+ |
TO-263 |
29600 |
绝对原装现货,价格优势! |
询价 |
