首页 >IRF2804S-7PPBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF2804S-7PPBF | HEXFET짰 Power MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve 文件：668.37 Kbytes 页数：11 Pages | IRF | IRF | |
IRF2804S-7PPBF | Advanced Process Technology 文件：286.19 Kbytes 页数：10 Pages | IRF | IRF | |
Advanced Process Technology 文件：286.19 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve 文件：292.34 Kbytes 页数：13 Pages | IRF | IRF | ||
AUTOMOTIVE GRADE 文件：360.7 Kbytes 页数：11 Pages | Infineon 英飞凌 | Infineon | ||
AUTOMOTIVE GRADE 文件：360.7 Kbytes 页数：11 Pages | Infineon 英飞凌 | Infineon |
详细参数
- 型号：
IRF2804S-7PPBF
- 功能描述：
MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-263 |
32360 |
IR全新特价IRF2804S-7PPBF即刻询购立享优惠#长期有货 |
询价 | ||
IR |
24+ |
TO-263-7 |
12800 |
只做原厂渠道 可追溯货源 |
询价 | ||
Infineon(英飞凌) |
24+ |
D2PAK |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
24+ |
D2PAK |
5000 |
全新、原装 |
询价 | |||
IR |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 | ||
VISHAY |
24+ |
TO-263 |
12000 |
VISHAY专营进口原装现货假一赔十 |
询价 | ||
IR |
23+ |
TO-263-7 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
23+ |
NA |
156 |
专做原装正品,假一罚百! |
询价 | ||
IR |
24+ |
D2PAK-7P |
50000 |
大批量供应优势库存热卖 |
询价 |
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