N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 46 A, 30 V RDS(ON)=

文件：119.89 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel, Logic Level, PowerTrench MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

文件：352.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 46 A, 30 V RDS(ON)=

文件：119.89 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

文件：2.11257 Mbytes 页数：5 Pages

BYCHIP

百域芯

N-Channel 30-V (D-S) MOSFET

文件：1.02 Mbytes 页数：8 Pages

VBSEMI

微碧半导体