N-Channel PowerTrench짰 MOSFET 40V, 50A, 5.2mOhm

Features RDS(ON)= 4mΩ(Typ), VGS= 10V, ID=50A Qg(10)= 89nC (Typ), VGS=10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant

文件：343.4 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=155A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.14205 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET 40V, 50A, 5.2m?

文件：324.88 Kbytes 页数：7 Pages

Fairchild

仙童半导体

丝印：FDD8444；Package：TO-252AA；N-Channel PowerTrench짰 MOSFET

文件：719.75 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDD8444L；Package：TO-252AA；N-Channel PowerTrench짰 MOSFET

文件：511.03 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

40V N沟道PowerTrench® MOSFET

N-Channel PowerTrench® MOSFET, 40V, 50A, 5.2mΩ •RDS(ON) = 4mΩ（典型值），VGS = 10V，ID=50A\n•Qg(10) = 89nC（典型值），VGS = 10V\n•低米勒电荷\n•低Qrr体二极管\n•UIS能力（单脉冲/重复脉冲）\n•符合AEC Q101\n•符合RoHS标准;

ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 40V, ID= 80A RDS(ON)

文件：2.04001 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET

Features Typ rDS(on) = 3.8mΩ at VGS = 5V, ID = 50A Typ Qg(tot)= 46nC at VGS= 5V Low Miller Charge Low QrrBody Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant

文件：282.07 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 40V, 50A, 5.2m?

文件：324.88 Kbytes 页数：7 Pages

Fairchild

仙童半导体