20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 21 A, 2

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=21A@ TC=25℃ ·Drain Source Voltage : VDSS=20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =32mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

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ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

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BYCHIP

百域芯

N 沟道，PowerTrench® MOSFET，20V，21A，32mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON)和高速开关进行了优化。 •-21 A，-20V。\n•RDS(ON) = 32 mΩ @ VGS = 4.5 V\n•RDS(ON) = 47 mΩ @ VGS = 2.5V\n•低栅极电荷（6.5nC，典型值）\n•快速开关\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体