250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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Fairchild

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250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：677.91 Kbytes 页数：9 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：677.91 Kbytes 页数：9 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

Features • 5.5A, 250V, RDS(on) = 1.0Ω @VGS = 10 V • Low gate charge ( typical 6.6 nC) • Low Crss ( typical 7.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

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Fairchild

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