N-Channel PowerTrench짰 MOSFET 40V, 50A, 8.7mOhm

Features RDS(ON)= 6.7 mΩ(Typ), VGS= 10V, ID=50A Qg(10)= 45nC (Typ), VGS=10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant

文件：338.13 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=70A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.22 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.04327 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET 40V, 50A, 8.7m廓

文件：360.94 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：FDD8445；Package：TO-252AA；N-Channel PowerTrench짰 MOSFET

文件：1.09734 Mbytes 页数：6 Pages

ONSEMI

安森美半导体

N 沟道 Power Trench® MOSFET 40V，50A，8.7mΩ

N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ •RDS(ON) = 6.7mΩ （典型值），VGS = 10V，ID = 50A\n•Qg(10) = 45nC（典型值），VGS = 10V\n•低密勒电荷\n•低 Qrr体二极管\n•UIS能力（单脉冲和重复脉冲）\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET

Features RDS(ON)= 6.7 mΩ(Typ), VGS= 10V, ID=50A Qg(10)= 45nC (Typ), VGS=10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant

文件：528.67 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 40V, 50A, 8.7m廓

文件：360.94 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 40V, 50A, 8.7m廓

文件：528.67 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司