250V N-Channel MOSFET

Features • 5.5A, 250V, RDS(on) = 1.0Ω @VGS = 10 V • Low gate charge ( typical 6.6 nC) • Low Crss ( typical 7.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：738.63 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V N-Channel MOSFET

ONSEMI

安森美半导体

250V N-Channel MOSFET

250V N-Channel MOSFET

文件：724.52 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：304.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel QFET MOSFET 250 V, 4.4 A, 1.0

文件：859.78 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司