250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 9.4A, 250V, RDS(on) = 0.42Ω @VGS = 10 V • Low gate charge ( typical 15.5 nC) • Low Crss ( typical 15 pF) • Fast switching

文件：729.53 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V N-Channel MOSFET

ONSEMI

安森美半导体

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：869.21 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V N-Channel MOSFET

ONSEMI

安森美半导体