250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：573.96 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P 沟道 QFET® MOSFET -250 V，-9.4 A，620 mΩ

这些 P 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。 这一先进技术是专为最大限度地降低通态电阻，提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件非常适合高效开关 DC/DC 转换器。 •-9.4 A、-250 V、RDS(on) = 620 mΩ（最大值）@ VGS = -10 V、ID = -4.7 A\n•低栅极电荷（典型值 29 nC)\n•低 Crss（典型值 27 pF)\n•100% 经过雪崩击穿测试;

ONSEMI

安森美半导体

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：573.96 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：563.5 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V P-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：578.92 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司