FQD11P06TF数据手册批发采购仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11P06	文件：333.66 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB11P06	文件：660.81 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11P06TM	文件：1.046329 Mbytes Page：9 Pages	P-ChannelQFETMOSFET-60V,-11.4A,175m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD11P06	文件：615.94 Kbytes Page：9 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD11P06	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD11P06	文件：353.73 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD11P06TM	文件：990.08 Kbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQD11P06TM	文件：912.3 Kbytes Page：4 Pages	P-channelEnhancementModePowerMOSFET Features VDS=-60V,ID=-20A RDS(ON)	BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD11P06TM	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI11P06	文件：660.81 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11P06	文件：646.59 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11P06	文件：374 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQPF11P06	文件：646.59 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU11P06	文件：615.94 Kbytes Page：9 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU11P06	文件：1.66632 Mbytes Page：7 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQU11P06	文件：377.67 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQU11P06	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
FQD11P06TF
功能描述：
MOSFET TO-250 DPAK P-CH 60V
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	FQD11P06TF	FAIRCHILD/仙童	22+	TO-252	47655	只做原装进口免费送样!!	询价
深圳市莱克讯科技有限公司	FQD11P06TF	FSC	2017+	TO-252	25899	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市勤思达科技有限公司	FQD11P06TF	FAIRC	1415+	TO-252(DPAK)	28500	全新原装正品,优势热卖	询价
深圳市弘为电子有限公司	FQD11P06TF	FAIRCHILD	16+	TO252	1068	原装现货假一罚十	询价
深圳市鼎盛源芯科技有限公司	FQD11P06TF	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市宇集芯电子有限公司	FQD11P06TF	FAIRCHIL	23+	TO-252	90000	一级代理商进口原装现货、价格合理	询价
深圳市百视威讯电子科技有限公司	FQD11P06TF		23+	N/A	48900	正品授权货源可靠	询价
深圳兆威电子有限公司	FQD11P06TF	VB	2019	TO-252	55000	绝对原装正品假一罚十!	询价
深圳市正迈科技有限公司	FQD11P06TF	FSC/ON	23+	原包装原封 □□	54600	原装进口特价供应 QQ 1304306553 更多详细咨询库存	询价
深圳市纳艾斯科技有限公司	FQD11P06TF	FAIRCHI	2020+	TO-252	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价

更多FQD11P06TF供应商更新时间2024-4-30 16:36:00

详细参数

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