N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 24 A RDS(ON)

文件：824.66 Kbytes 页数：6 Pages

BYCHIP

百域芯

N-Channel QFET MOSFET 200 V, 15 A, 140 mOhm

文件：737.24 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel 200 V (D-S) MOSFET

文件：1.01028 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：793.14 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.14Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.47 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：793.14 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体