250V N-Channel MOSFET

Features ■ Typ rDS(on) = 108mΩ at VGS = 10V, ID = 25.5A ■ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

文件：1.10517 Mbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET

Features ■ Typ rDS(on) = 108mΩ at VGS = 10V, ID = 25.5A ■ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

文件：500.47 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N 沟道，MOSFET，250V，25.5A，131mΩ

N-Channel MOSFET 250 V, 25.5 A, 131 mΩ •典型 rDS(on) = 108 mΩ（VGS = 10 V、ID = 25.5 A）\n•典型 Qg(tot)=45 nC，条件是 VGS =10 V、ID =27 A \n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101 标准;

ONSEMI

安森美半导体

250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energ

文件：768.71 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：765.41 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.11Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：277.49 Kbytes 页数：2 Pages

ISC

无锡固电