丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos=200v + p= 60A + Reson $0650 @Ves=10V

文件：998.02 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM

文件：268.86 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：271.82 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR

N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.3 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150 oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

文件：82.95 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体