isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR

N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.3 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150 oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

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STMICROELECTRONICS

意法半导体

N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR

ST

意法半导体

4A, 200V N-CHANNEL POWER MOSFET

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4A, 200V N-CHANNEL POWER MOSFET

文件：147.22 Kbytes 页数：3 Pages

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