isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.47 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：86.87 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET

ST

意法半导体

N-channel 100V - 0.021廓 - 50A - D2PAK STripFET??Power MOSFET

文件：412.37 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：86.29 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：51.01 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体