isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：477.44 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：582.78 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?줡ower MOSFET

文件：585.41 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 650V @Tjmax - 1.2廓 - 5A TO-220/FP/DPAK Zener-Protected SuperMESH??MOSFET

文件：494.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.87 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：477.44 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：582.78 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?줡ower MOSFET

文件：585.41 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 650V @Tjmax - 1.2廓 - 5A TO-220/FP/DPAK Zener-Protected SuperMESH??MOSFET

文件：494.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体