isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.78 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：454.71 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：P55NF06L；Package：TO-220；N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

文件：337.38 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60-V (D-S) MOSFET

文件：981.47 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：454.71 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.66 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

文件：337.38 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET，TO-220封装

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature Size™\\\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% avalanche tested;

ST

意法半导体