isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.34 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

文件：107.93 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

100 UIS and Rg tested

文件：436.04 Kbytes 页数：6 Pages

TSC

台湾半导体

N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2.

文件：244.35 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET

文件：85.95 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

文件：107.93 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体