isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.5 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500V - 2.4廓 - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET

Description The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology. ■ 100 avalanche tested ■ Extremely high dv/dt capabili

文件：893.9 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.09034 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL 500V 2.4 Ohm 3A TO-220 SUPERFREDMESH MOSFET

• 100% avalanche tested\n• Gate charge minimized\n• Extremely high dv/dt capability• Very good manufacturing repeability\n• Very low intrinsic capacitances;

ST

意法半导体