isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.07 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) =

文件：338.71 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

文件：356.26 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.05 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced planar process

文件：416.33 Kbytes 页数：6 Pages

TSC

台湾半导体