isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=520V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.28 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 520V - 1.22廓 - 4.4A - TO-220 - DPAK - I2PAK - IPAK Zener-protected SuperMESH??Power MOSFET

文件：396.17 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P5NK52ZD；Package：TO-220；N-channel 520 V,1.22 廓,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH??Power MOSFET

文件：777.75 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N沟道520V - 1.22Ohm - 4.4A - TO-220 - DPAK - I2PAK - IPAK

The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the \\\"FDmesh™\\\" advanced technology. • Improved ESD capability \n• 100% avalanche tested \n• Gate charge minimized \n• Extremely high dv/dt capability \n• Very good manufacturing repeatability \n• Very low intrinsic capacitances;

ST

意法半导体