N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：378.77 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 1.9廓 - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：353.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.9Q - 4.3A

文件：292.25 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-channel 800V - 1.9廓 - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：353.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：378.77 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.9Q - 4.3A

文件：292.25 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power MOSFET

文件：2.12156 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N沟道800 V、1.9 Ohm、4.3 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-220封装

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very low intrinsic capacitance;

ST

意法半导体

N沟道800 V、1.9 Ohm、4.3 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-220FP封装

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • 100% avalanche tested \n• Very low intrinsic capacitances \n• Gate charge minimized \n• Switching application \n• Very good manufacturing repeatability;

ST

意法半导体