isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.28 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：P5NK50Z；Package：TO-220；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：618.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：P5NK50Z；Package：TO-220；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelect

文件：674.1 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

丝印：P5NK50Z；Package：TO-220；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：447.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：P5NK50Z；Package：TO-220；N-CHANNEL 500V - 1.22廓 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?줞OSFET

文件：452.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P5NK50ZFP；Package：TO-220FP；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelect

文件：674.1 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

丝印：P5NK50ZFP；Package：TO-220FP；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：618.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：P5NK50ZFP；Package：TO-220FP；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：447.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.72 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：P5NK50ZFP；Package：TO-220FP；N-CHANNEL 500V - 1.22廓 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?줞OSFET

文件：452.27 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体