N沟道500 V、1.22 Ohm典型值、4.4 A SuperMESH功率MOSFET，TO-220封装

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体

N沟道500 V、1.22 Ohm典型值、4.4 A SuperMESH功率MOSFET，TO-220FP封装

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体