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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
STD4N20	文件：271.82 Kbytes Page：9 Pages	N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
EMDA4N20A	文件：219.33 Kbytes Page：6 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS200V RDSON(MAX.)140mΩ ID15A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
FQB4N20	文件：704.04 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB4N20L	文件：517.289 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：701.83 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：781.21 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：304.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD4N20L	文件：519.64 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20L	文件：526.71 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20LTF	文件：526.71 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20TF	文件：781.21 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI4N20	文件：704.04 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI4N20L	文件：517.289 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：688.08 Kbytes Page：8 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：302.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQP4N20	文件：2.50977 Mbytes Page：9 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQP4N20L	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF4N20	文件：726 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •2.8A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF4N20L	文件：541.4 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
STD4N20
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY⑩ MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	STD4N20	ST/意法	22+		5000	只做原装进口免费送样!!	询价
深圳市莱克讯科技有限公司	STD4N20	ST	2017+	TO-252	25899	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市昌和盛利电子有限公司	STD4N20	ST	23+	TO-252	8795		询价
深圳好佳好科技有限公司	STD4N20	ST	360000	原厂原装	1305		询价
深圳市佳鑫美电子科技有限公司	STD4N20	ST	22+	TO-252	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市科恒伟业电子有限公司	STD4N20	ST	1822+	TO-252	9852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市宇集芯电子有限公司	STD4N20	ST	23+	TO-252	90000	一级代理商进口原装现货、假一罚十价格合理	询价
深圳市百视威讯电子科技有限公司	STD4N20		23+	N/A	12850	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	STD4N20	ST	1746+	to252	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳市维尔达电子有限公司	STD4N20	ST	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价

更多STD4N20供应商更新时间2024-4-29 16:37:00

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