STD4NK60ZT4

N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH™.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure

STD4NK60ZT4

N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STD4NK60ZT4

isc N-Channel MOSFET Transistor

•FEATURES •DrainSourceVoltage- :VDSS=600V(Min) •Staticdrain-sourceon-resistance :RDS(on)≤2Ω@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

STD4NK60ZT4

Power MOSFET

STB4NK60ZT4

N-Channel650V(D-S)MOSFET

STB4NK60ZT4

N-channel600V,1.7Ωtyp.,4ASuperMESH™PowerMOSFETsinI2PAK,D2PAK,IPAKandDPAKpackages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH™.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure