isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

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STMICROELECTRONICS

意法半导体

N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件：1.11902 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

文件：1.07814 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N沟道525 V、2.1 Ohm典型值、2.5 A SuperMESH3(TM) 功率MOSFET，DPAK封装

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable f • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体