N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

General Description This device employs advanced MOSFET technology and features low gate charge while maintaining low on resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=40.3A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.019Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

ONSEMI

安森美半导体

30V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 60A, 30V. RDS(on)= 0.0135Ω@VGS= 10 V • Low gate charge ( typical 18.5 nC) • Low Crss ( typical 155 pF) • Fa

文件：651.43 Kbytes 页数：8 Pages

Fairchild

仙童半导体

30V LOGIC N-Channel MOSFET

文件：655.68 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage application such as

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GTM

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