N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage application such as

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GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ETL

亚历电子

N-Channel Enhancement-Mode MOSFET

Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency

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GE

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：242.87 Kbytes 页数：5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：243.5 Kbytes 页数：5 Pages

GTM

勤益投资控股