30V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 60A, 30V. RDS(on)= 0.0135Ω@VGS= 10 V • Low gate charge ( typical 18.5 nC) • Low Crss ( typical 155 pF) • Fa

文件：651.43 Kbytes 页数：8 Pages

Fairchild

仙童半导体

30V LOGIC N-Channel MOSFET

ONSEMI

安森美半导体

30V LOGIC N-Channel MOSFET

文件：655.68 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage application such as

文件：272.16 Kbytes 页数：5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：275.87 Kbytes 页数：5 Pages

ETL

亚历电子