600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching p

文件：911.62 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：1.035859 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.82 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，QFET®，600 V，5.5 A，2.0 Ω，TO-220

此类 N 沟道 MOSFET 增强型电场效应晶体管使用安森美半导体的平面条纹 DMOS 专属工艺生产。此先进工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率因数校正、基于半桥拓扑结构的电子灯镇流器。 •5.5 A，600 V，RDS(on) = 2.0Ω @ VGS = 10 V\n•低栅极电荷（典型值16 nC）\n•低Crss（典型值7 pF）\n•快速开关\n•100%经过雪崩测试\n•可提高dv/dt处理能力;

ONSEMI

安森美半导体