isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=40A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.016Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：277.75 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel MOSFET

文件：681.73 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N 沟道 QFET® MOSFET 60V，40A，16mΩ

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •40A, 60V, RDS(on)= 16mΩ（最大值）@VGS = 10 V, ID = 20A栅极电荷低（典型值：48nC)\n•低 Crss（典型值100pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

60V N-Channel MOSFET

文件：1.94094 Mbytes 页数：7 Pages

KERSEMI

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP65N06LT is sup

文件：69.59 Kbytes 页数：8 Pages

PHI

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP65N06LT is sup

文件：71.46 Kbytes 页数：9 Pages

PHI

飞利浦