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FQPF19N10

100V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQPF19N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=13.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQPF19N10L

100V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQPF19N10L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=13.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

19N10

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

19N10

100VN-ChannelMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

19N10G

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

19N10G-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

19N10L

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

19N10L-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

19N10V

100VN-ChannelMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

FQB19N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQB19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQB19N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD19N10

100VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD19N10

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD19N10

N-ChannelQFET짰MOSFET100V,15.6A,100m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD19N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD19N10

100VN-ChannelMOSFET

Features LowGateCharge(Typ.14nC) LowCrss(Typ.35pF) VDS(V)=100V ID=15.6A(VGS=10V) RDS(ON)

UMWUMW

友台友台半导体

UMW

FQD19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

详细参数

  • 型号:

    FQPF19N10

  • 功能描述:

    MOSFET 100V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD
ROHS
5632
2015
只做进口原装正品!现货或者订货一周货期!只要要网上
询价
onsemi
23+
TO-220F-3
30000
晶体管-分立半导体产品-原装正品
询价
FAIRCHILD
23+
TO-220F
580000
100%原装现货
询价
FAIRCHILD/仙童
2021+
T0-220-3PF
3580
原装现货/15年行业经验欢迎询价
询价
FAIRCHILD/仙童
22+
TO-220F
5
只做原装进口 免费送样!!
询价
FAIRCHIL
2015+
TO-220F
12500
全新原装,现货库存长期供应
询价
仙童
05+
TO-220F
3000
原装进口
询价
FSC
23+
SMD
40488
全新原装现货,专业代理热卖
询价
FAIRCHILD
2017+
原厂封装
25896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FAIRCHILD
1305+
TO-220F
12000
公司特价原装现货
询价
更多FQPF19N10供应商 更新时间2024-4-26 9:31:00