丝印：FQP8N60C；Package：TO-220；N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high

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ONSEMI

安森美半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：927.42 Kbytes 页数：10 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.65 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,

文件：1.12264 Mbytes 页数：9 Pages

KERSEMI

600V N-Channel MOSFET

文件：1.30367 Mbytes 页数：10 Pages

Fairchild

仙童半导体

N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

功率 MOSFET，N 沟道，QFET®，600 V，7.5 A，1.2 Ω，TO-220

此类 N 沟道 MOSFET 增强型电场效应晶体管使用安森美半导体的平面条纹 DMOS 专属工艺生产。此先进工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率因数校正、基于半桥拓扑结构的电子灯镇流器。 •7.5 A，600 V，RDS(on) = 1.2 Ω（最大值），需 VGS = 10 V、ID = 3.75 A\n•低栅极电荷（典型值 28 nC）\n•低 Crss（典型值 12 pF)\n•100% 经过雪崩击穿测试;

ONSEMI

安森美半导体