60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：646.59 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

功率 MOSFET，P 沟道，QFET®，-60 V，-8.6 A，175 mΩ，TO-220F

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、音频放大器、直流电机控制和可变开关电源应用。 •-8.6A, -60V, RDS(on)= 175mΩ（最大值）@VGS = -10 V, ID = -4.3A栅极电荷低（典型值：13nC)\n•低 Crss（典型值45pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：615.94 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：1.18404 Mbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 60-V (D-S) MOSFET

文件：1.66632 Mbytes 页数：7 Pages

VBSEMI

微碧半导体