N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.3A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.87 Kbytes 页数：2 Pages

ISC

无锡固电

Power switch circuit of adaptor and charger

文件：471.75 Kbytes 页数：9 Pages

HMSEMI

华之美半导体

N-Channel Enhancement Mode

Standard Power MOSFET N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

文件：87.34 Kbytes 页数：4 Pages

IXYS

艾赛斯