FQT13N06TF规格书应用电路供应价格-114ic电子网

首页 >FQT13N06TF>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业
FQT13N06TF	文件：774.85 Kbytes Page：8 Pages	N-Channel QFET짰 MOSFET 60 V, 2.8 A, 140 m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB13N06	文件：672.55 Kbytes Page：9 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06	文件：659.99 Kbytes Page：10 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFETMOSFET60V,10A,140m	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET60V,10A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06	文件：305.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQD13N06L	文件：787.87 Kbytes Page：6 Pages	60VN-ChannelMOSFET Features ID=5.5A LowGateCharge(Typ.4.8nC) LowCrss(Typ.17pF) LowLevelGateDriveRequirementsAllowing DirectOperationformLogicDrivers VDS=60V RDS(ON)(atVGS=10V)	UMWUMW 友台友台半导体
FQD13N06L	文件：653.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06L	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET60V,11A,115m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06L	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06LTM	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET60V,11A,115m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06LTM	文件：787.87 Kbytes Page：6 Pages	60VN-ChannelMOSFET Features ID=5.5A LowGateCharge(Typ.4.8nC) LowCrss(Typ.17pF) LowLevelGateDriveRequirementsAllowing DirectOperationformLogicDrivers VDS=60V RDS(ON)(atVGS=10V)	UMWUMW 友台友台半导体
FQD13N06TF	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFETMOSFET60V,10A,140m	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06TM	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET60V,10A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI13N06	文件：672.55 Kbytes Page：9 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP13N06	文件：664.65 Kbytes Page：8 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP13N06	文件：302.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司

12 3 >>>

详细参数

型号：
FQT13N06TF
功能描述：
MOSFET 60V N-Channel QFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	FQT13N06TF	onsemi	23+	SOT-223-4	30000	晶体管-分立半导体产品-原装正品	询价
深圳市金华微盛电子有限公司	FQT13N06TF	ON/安森美	2019+	SOT-223	78550	原厂渠道可含税出货	询价
深圳市讯顺达科技有限公司	FQT13N06TF	ON/FSC	20+	SOT-223	12000	全新原装公司现货	询价
深圳市坤融电子科技有限公司	FQT13N06TF	FAIRCHILD/仙童	22+	SOT-223	450	只做原装进口免费送样!!	询价
贸泽芯城（深圳）电子科技有限公司	FQT13N06TF	ON/FSC	20+	SOT-223	12000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市河锋鑫科技有限公司	FQT13N06TF	ON/安森美	20+	SOT-223	120000	原装正品可含税交易	询价
深圳市汇莱威科技有限公司	FQT13N06TF	ON/安森美		SOT223	7906200		询价
深圳市明嘉莱科技有限公司	FQT13N06TF	ON/安森美	24+	SMD	860000	明嘉莱只做原装正品现货	询价
深圳市永贝尔科技有限公司	FQT13N06TF	ON(安森美)	2023+	SOT-223	4550	全新原装正品	询价
深圳市高捷芯城科技有限公司	FQT13N06TF	ON/安森美	23+	SOT-223	15048	原厂可订货,技术支持,直接渠道。可签保供合同	询价

更多FQT13N06TF供应商更新时间2024-4-23 20:19:00

详细参数

相关规格书

相关库存