FQU11P06TU中文资料下载供应价格仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQU11P06TU	文件：1.18404 Mbytes Page：9 Pages	P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11P06	文件：333.66 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB11P06	文件：660.81 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB11P06TM	文件：1.046329 Mbytes Page：9 Pages	P-ChannelQFETMOSFET-60V,-11.4A,175m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD11P06	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD11P06	文件：615.94 Kbytes Page：9 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD11P06	文件：353.73 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD11P06TM	文件：990.08 Kbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQD11P06TM	文件：912.3 Kbytes Page：4 Pages	P-channelEnhancementModePowerMOSFET Features VDS=-60V,ID=-20A RDS(ON)	BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD11P06TM	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI11P06	文件：660.81 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11P06	文件：646.59 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP11P06	文件：374 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQPF11P06	文件：646.59 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU11P06	文件：615.94 Kbytes Page：9 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU11P06	文件：1.66632 Mbytes Page：7 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQU11P06	文件：377.67 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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详细参数

型号：
FQU11P06TU
功能描述：
MOSFET 60V P-Channel QFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	FQU11P06TU	onsemi	23+	I-PAK	30000	晶体管-分立半导体产品-原装正品	询价
深圳市高捷芯城科技有限公司	FQU11P06TU	onsemi(安森美)	23+	IPAK-3	11346	支持大陆交货,美金交易。原装现货库存。	询价
深圳市博浩通科技有限公司	FQU11P06TU	Fairchild	23+	I-PAK(TO-251AA)	7750	全新原装优势	询价
齐创科技(上海,北京,青岛)有限公司	FQU11P06TU	原厂	23+	TO-251	5000	原装正品,假一罚十	询价
深圳市达恩科技有限公司	FQU11P06TU	ONSemiconductor	18+	NA	3632	进口原装正品优势供应QQ3171516190	询价
深圳市科恒伟业电子有限公司	FQU11P06TU	FAIRCHILD	1816+	TO-251	6523	科恒伟业!只做原装正品,假一赔十!	询价
深圳市鼎盛源芯科技有限公司	FQU11P06TU	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市华斯顿科技有限公司	FQU11P06TU	FAIRCHILD	22+23+	TO251	11849	绝对原装正品全新进口深圳现货	询价
深圳市百视威讯电子科技有限公司	FQU11P06TU		23+	N/A	45980	正品授权货源可靠	询价
深圳兆威电子有限公司	FQU11P06TU	FAIRCHILD/仙童	22+	TO251	34606	原装正品现货	询价

更多FQU11P06TU供应商更新时间2024-5-2 10:12:00

详细参数

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