零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FQPF9N25C | 250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
FQPF9N25C | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=8.8A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.43Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelQFET짰MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
250VN-ChannelMOSFET 250VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelQFET짰MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |
详细参数
- 型号:
FQPF9N25C
- 功能描述:
MOSFET 250V N-Channel Advance Q-FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2019+全新原装正品 |
TO220F |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
onsemi |
23+ |
TO-220F-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
FSC进口原 |
22+ |
TO220F |
3498 |
长源创新-只做原装---假一赔十 |
询价 | ||
FAIRCHILD/仙童 |
17+ |
TO-220F |
31518 |
原装正品 可含税交易 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO220F |
25000 |
代理原装现货,假一赔十 |
询价 | ||
ON/安森美 |
24+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
仙童 |
05+ |
TO-220F |
4000 |
原装进口 |
询价 | ||
FSC |
1436+ |
TO-220F |
30000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
FAIRCHIL |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
原厂 |
23+ |
TO-220F |
5000 |
原装正品,假一罚十 |
询价 |
相关规格书
更多- FQPF9N25CT
- FQPF9N50C
- FQPF9N90CT
- FQPF9P25YDTU
- FQS4901TF
- FQT13N06LTF
- FQT1N60CTF_WS
- FQT2P25TF
- FQT3P20TF_SB82100
- FQT4N25TF
- FQT5P10TF-CUTTAPE
- FQT7N10TF
- FQU10N20CTU
- FQU12N20TU
- FQU13N06LTU_WS
- FQU17P06
- FQU1N60CTU
- FQU20N06LTU
- FQU2N60CTU
- FQU2N90TU_WS
- FQU4N50TU_WS
- FQU5N50CTU_WS
- FQU5P20TU
- FQU9N25TU
- FQ-XL2
- FR-01
- FR014H5JZ
- FR01AC10PB
- FR01AC16HB-S
- FR01AR10HB
- FR01AR10PB
- FR01AR10PB-W-S
- FR01AR16PB
- FR01FC10H
- FR01FC10H-06XL-S
- FR01FC10P
- FR01FC10P-W-S
- FR01FC16H-06XL
- FR01FC16H-S
- FR01FC16P-S
- FR01FC16P-W-S
- FR01FR10H-06XL
- FR01FR10H-S
- FR01FR10P-W-S
- FR01FR16H-06XL-S
相关库存
更多- FQPF9N25CYDTU
- FQPF9N50CF
- FQPF9P25
- FQS4900TF
- FQS4903TF
- FQT13N06TF
- FQT1N80TF_WS
- FQT3P20TF
- FQT4N20LTF
- FQT5P10TF
- FQT7N10LTF
- FQTN35144-UF-10
- FQU11P06TU
- FQU13N06LTU
- FQU13N10LTU
- FQU17P06TU
- FQU1N80TU
- FQU2N100TU
- FQU2N90TU_AM002
- FQU3N50CTU
- FQU5N40TU
- FQU5N60CTU
- FQU8P10TU
- FQ-WN002
- FQ-XT
- FR011L5J
- FR015L3EZ
- FR01AC10PB-S
- FR01AC16PB-S
- FR01AR10HB-S
- FR01AR10PB-S
- FR01AR16HB-S
- FR01AR16PB-W-S
- FR01FC10H-06XL
- FR01FC10H-S
- FR01FC10P-S
- FR01FC16H
- FR01FC16H-06XL-S
- FR01FC16P
- FR01FC16P-W
- FR01FR10H
- FR01FR10H-06XL-S
- FR01FR10P-S
- FR01FR16H-06XL
- FR01FR16H-S