FQU9N25说明书PDF资料原装现货仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
FQU9N25	文件：724.11 Kbytes Page：9 Pages	250V N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQU9N25	文件：927.63 Kbytes Page：10 Pages	N-Channel QFET짰 MOSFET 250 V, 7.4A, 420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQU9N25	文件：330.28 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQU9N25TU	文件：927.63 Kbytes Page：10 Pages	N-Channel QFET짰 MOSFET 250 V, 7.4A, 420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
9N25	文件：448.98 Kbytes Page：8 Pages	N-ChannelPowerMOSFET	NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司
CEB9N25	文件：505.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司
CEP9N25	文件：505.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司
FQB9N25	文件：729.53 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB9N25C	文件：869.21 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD9N25	文件：724.11 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD9N25	文件：305.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQD9N25	文件：927.63 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD9N25TM	文件：752.35 Kbytes Page：8 Pages	250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI9N25	文件：729.53 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI9N25C	文件：869.21 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP9N25	文件：296.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQP9N25	文件：713.69 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP9N25C	文件：1.13618 Mbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQPF9N25	文件：731.1 Kbytes Page：8 Pages	250VN-ChannelMOSFET 250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQPF9N25	文件：278.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司

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详细参数

型号：
FQU9N25
制造商：
FAIRCHILD
制造商全称：
Fairchild Semiconductor
功能描述：
250V N-Channel MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	FQU9N25	FAIRCHIL	1215+	TO-251	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市特顺芯科技有限公司	FQU9N25	FAIRCHIL	08+(pbfree)	TO-251	8866		询价
深圳市星佑电子有限公司	FQU9N25	仙童	06+	TO-251	5000	原装库存	询价
深圳市莱克讯科技有限公司	FQU9N25	FAIRCHILD	2017+	TO-251-3	25899	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市博浩通科技有限公司	FQU9N25	FAIRCHIL	23+	TO-251	6000	全新原装	询价
深圳市永贝尔科技有限公司	FQU9N25	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市锦喆鸿电子有限公司	FQU9N25	FAIRCHI	21+	TO-251	12588	原装正品,自己库存假一罚十	询价
深圳市百视威讯电子科技有限公司	FQU9N25		23+	N/A	38160	正品授权货源可靠	询价
深圳兆威电子有限公司	FQU9N25	FAIRCHILD	2019	TO-251-3	55000	原装正品现货假一赔十	询价
深圳市宏捷佳电子科技有限公司	FQU9N25	FAIRCHILD	23+	TO-251(IPAK)	12300	全新原装真实库存含13点增值税票!	询价

更多FQU9N25供应商更新时间2024-4-27 11:04:00

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