900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8.0A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.61 Kbytes 页数：2 Pages

ISC

无锡固电

ThinkiSemi 8.0A,900V Planar N-Channel Power MOSFETs

文件：1.75557 Mbytes 页数：8 Pages

THINKISEMI

思祁半导体

N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm

文件：1.12742 Mbytes 页数：10 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，QFET®，900 V，8.0 A，1.4 Ω，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •8A, 900V, RDS(on)= 1.4Ω（最大值）@VGS = 10 V, ID = 4A栅极电荷低（典型值：45nC)\n•低 Crss（典型值14pF)\n•100% 经过雪崩击穿测试\"\n• 100% avalanche tested;

ONSEMI

安森美半导体