FQPF5N90

900V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQPF5N90

Isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FQPF5N90

功率 MOSFET，N 沟道，QFET®，900 V，3 A，2.3 Ω，D2PAK; •3A, 900V, RDS(on)= 2.3Ω（最大值）@VGS = 10 V, ID = 1.5A栅极电荷低（典型值：31nC)\n•低 Crss（典型值13pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS compliant\n;

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。

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KSM5N90

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SSH5N90

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SSH5N90A

iscN-ChannelMOSFETTransistor