60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：703.07 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel QFET짰 MOSFET -60 V, -30 A, 26 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：1.32441 Mbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

功率 MOSFET，P 沟道，QFET®，-60 V，-30 A，26 mΩ，TO-220F

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-30A, -60V, RDS(on)= 26mΩ（最大值）@VGS = -10 V, ID = -15A栅极电荷低（典型值：84nC)\n•低 Crss（典型值320pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

P-Channel QFET짰 MOSFET -60 V, -30 A, 26 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：1.32441 Mbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司