600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：839.15 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：911.02 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.66 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，QFET®，600 V，4.5 A，2.5 Ω，TO-220F

此类 N 沟道 MOSFET 增强型电场效应晶体管是使用 Fairchild 的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率系数校正、基于半桥的电子灯镇流器。 •4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10V \n•Low gate charge (typical 15 nC) \n•Low Crss (typical 6.5 pF) \n•Fast switching \n•100% avalanche tested \n•Improved dv/dt capability;

ONSEMI

安森美半导体