200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：610.29 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

功率 MOSFET，P 沟道，QFET®，-200 V，-3.4 A，1.4 Ω，TO-220F

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-3.4 A、-200 V、RDS(on)= 1.4 Ω（最大值），需 VGS = -10 V、ID = -1.7 A栅极电荷低（典型值：10nC)\n•低 Crss（典型值12pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

P 沟道 QFET® MOSFET

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-3.4 A、-200 V、RDS(on) = 1.4 Ω（最大值），需 VGS = -10 V、ID = -1.7 A\n•低栅极电荷（典型值 10 nC)\n•低Crss（典型值 12 pF)\n•100% 经过雪崩击穿测试;

ONSEMI

安森美半导体

200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：663.26 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：614.5 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Excellent package for good heat dissipation.

文件：644.98 Kbytes 页数：4 Pages

KERSEMI