800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：889.91 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.01814 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel QFET MOSFET

文件：855.56 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.01814 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，QFET®，800 V，5.5 A，2.5 Ω，TO-220F

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •5.5A, 800V, RDS(on)= 2.5Ω（最大值）@VGS = 10 V, ID = 2.75A栅极电荷低（典型值：21nC)\n•低 Crss（典型值8pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体