600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：581.16 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

The Use of QFETs in a Flyback Converter

Introduction Power supply designers face many challenges in designing more efficient and cost-effective power supplies. Efficiency is a major consideration in designing switching power supplies. Many factors in the design process such as the input filter capacitance, transformer core geometry and

文件：124.93 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.4A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.89 Kbytes 页数：2 Pages

ISC

无锡固电

The Use of QFETs in a Flyback Converter

ONSEMI

安森美半导体